SIR846DP

New Product N-Channel 100-V (D-S) MOSFET SiR846DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.0078 at VGS = 10 V 0.0085 at VGS = 7.5 V ID (A)a 60 60 Qg (Typ.) 35.7 nC PowerPAK® SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch Isolated DC/DC Converters Full Bridge D G Bottom View Ordering Information: SiR846DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IDM IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TA = 70 °C TJ, Tstg Limit 100 ± 20 60a 60a 20b, c 16b, c 100 60a 5.6b, c 35 61 104 66.6 6.25b, c 4.0b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State RthJA RthJC 15 0.9 20 °C...