SIR864DP

New Product N-Channel 30 V (D-S) MOSFET SiR864DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0036 at VGS = 10 V 0.0045 at VGS = 4.5 V PowerPAK SO-8 ID (A)a 40g 40g Qg (Typ.) 20 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiR864DP-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS Synchronous Buck Converter - Low Side Switch: Low Ring Voltage Notebook PC Graphic Cards Server G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L =0.1 mH VDS VGS ID IDM IS IAS EAS Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Limit 30 ± 20 40g 40g 28b, c 22.5b, c 70 40g 4.5b, c 30 45 54 34.7 5.0b, c 3.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t  10 s...