SIR876ADP

New Product N-Channel 100 V (D-S) MOSFET SiR876ADP Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) Max. 0.0108 at VGS = 10 V 0.0114 at VGS = 7.5 V 0.0145 at VGS = 4.5 V ID (A)a 40 40 40 PowerPAK® SO-8 Qg (Typ.) 16.3 nC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 Bottom View Ordering Information: SiR876ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Primary Side Switch Telecom/Server 48 V, Full/Half-Bridge DC/DC Industrial D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t = 300 µs) IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature)d, e Limit 100 ± 20 40a 40a 15.2b, c 12.1b, c 80 40a 4.5b, c 25 31.2 62.5 40 5b, c 3.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to...