SIR878DP

New Product SiR878DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.014 at VGS = 10 V 0.0148 at VGS = 7.5 V 0.019 at VGS = 4.5 V ID (A)a 40 38 34 13.6 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 APPLICATIONS 5.15 mm 6.15 mm S 1 2 3 S S DC/DC Primary Side Switch Telecom/Server 48 V, Full/Half-Bridge dc-to-dc Industrial D G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SiR878DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L =0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C d, e http://www.DataSheet4U.net/ Symbol VDS VGS ID Limit 100 ± 20 40 32 13.3b, c 10.6b, c 80 40 4.5b, c 20 20 44.5 28.5 5.0b, c 3.2b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS PD A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TJ, Tstg °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit RthJA t  10 s 20 25 Maximum Junction-to-Ambientb, f °C/W RthJC...