www.vishay.com
SiR880ADP
Vishay Siliconix
N-Channel 80 V (D-S) MOSFET
PowerPAK® SO-8 Single D
D8 D7 D6
5
6.15 mm
1 ...
www.vishay.com
SiR880ADP
Vishay Siliconix
N-Channel 80 V (D-S)
MOSFET
PowerPAK® SO-8 Single D
D8 D7 D6
5
6.15 mm
1 5.15 mm
Top View
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration
1 2S 3S 4S G Bottom View
80 0.0063 0.0068 0.0089
24 60 Single
FEATURES
TrenchFET® power
MOSFET
100 % Rg and UIS tested Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS Primary side switch Isolated DC/DC converters Full bridge Synchronous rectification
G
D
S N-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
PowerPAK SO-8 SiR880ADP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source
voltage Gate-source
voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (t = 300 μs) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
LIMIT
80 ± 20 60 a 60 a 20.7 b, c 16.4 b, c 100 60 a 4.9 b, c 30 45 83 53 5.4 b, c 3.4 b, c -55 to +150 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPI...
