www.vishay.com
SiRA18ADP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () MAX. 0...
www.vishay.com
SiRA18ADP
Vishay Siliconix
N-Channel 30 V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () MAX. 0.0087 at VGS = 10 V 0.0135 at VGS = 4.5 V
ID (A) a 30.6 24.5
PowerPAK® SO-8 Single D
D8 D7 D6
5
Qg (TYP.) 6.9 nC
6.15 mm
1
Top View
5.15 mm
1 2S 3S 4S G Bottom View
Ordering Information:
SiRA18ADP-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
TrenchFET® Gen IV power
MOSFET
100 % Rg and UIS tested Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS DC/DC conversion Battery protection Load switching DC/AC inverters Synchronous buck converters
G
D
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage
VDS
Gate-Source
Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VGS ID IDM
Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
IS IAS EAS
PD
TJ, Tstg
LIMIT 30
+20, -16 30.6 24.5
14.5 b, c 11.5 b, c
70 13.3 3 b, c 10
5 14.7 9.4 3.3 b, c 2.1 b ,c -55 to +150 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient b, f Maximum Junction-to-Case (Drain)
...
