New Product
SiS406DN
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.011 at VGS = 10 V 0.0145 at VGS = 4.5 V ID (A) 14 12.2
FEATURES
Halogen-free TrenchFET® Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested • 100 % UIS Tested • • • •
RoHS
COMPLIANT
APPLICATIONS
PowerPAK 1212-8
• Adaptor Switch • Load Switch
3.30 mm
D
3.30 mm
S 1 2 3 S S
G 4
D 8 7 6 5 D D D
G
Bottom View
Ordering Inf.
N-Channel MOSFET
New Product
SiS406DN
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.011 at VGS = 10 V 0.0145 at VGS = 4.5 V ID (A) 14 12.2
FEATURES
Halogen-free TrenchFET® Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested • 100 % UIS Tested • • • •
RoHS
COMPLIANT
APPLICATIONS
PowerPAK 1212-8
• Adaptor Switch • Load Switch
3.30 mm
D
3.30 mm
S 1 2 3 S S
G 4
D 8 7 6 5 D D D
G
Bottom View
Ordering Information: SiS406DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c Conduction)a L = 0.1 mH TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 3.7 2.3 - 55 to 150 260 3.3 20 20 1.5 1.0 mJ W °C 14 12.2 50 1.4 10 s 30 ± 25 9 7.3 A Steady State Unit V
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Steady State Symbol RthJA RthJC Typical 28 66 2.0 Maximum 34 81 2.4 °C/W Unit
Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 121.