New Product
SiS438DN
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) 0.0095 at VGS = 10 V 0.0125 at VGS = 4.5 V ID (A)a, g 16 7.3 nC 16 Qg (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC
PowerPAK® 1212-8
APPLICATIONS
3.30 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
3.30 mm
• DC/DC Conversion • POL
D
G
Bottom View Ordering Infor.
N-Channel MOSFET
New Product
SiS438DN
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) 0.0095 at VGS = 10 V 0.0125 at VGS = 4.5 V ID (A)a, g 16 7.3 nC 16 Qg (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC
PowerPAK® 1212-8
APPLICATIONS
3.30 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
3.30 mm
• DC/DC Conversion • POL
D
G
Bottom View Ordering Information: SiS438DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH Symbol VDS VGS ID IDM IAS EAS IS Limit 20 ± 20 16a, g 16g 14.3b, c 11.3b, c 32g 15 11.25 16a, g 2.9b, c 27.7 17.7 3.5b, c 2.2b, c - 55 to 150 260 Unit V
A
mJ A
TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
PD TJ, Tstg
W
°C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 29 3.6 Maximum 36 4.5 Unit °C/W
Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4.