www.vishay.com
SiS496EDNT
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PowerPAK® 1212-8S
D
D
D 6
7
5
D 8
3.3 mm
1 Top View
3.3 mm
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration
1
4
3 S
2 S
S
G
Bottom View
30 0.0048 0.0062
14 50 a Single
FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Thin 0.75 mm height • Typical ESD performance 2500 V • Material categorization: for definitions of compl.
N-Channel MOSFET
www.vishay.com
SiS496EDNT
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PowerPAK® 1212-8S
D
D
D 6
7
5
D 8
3.3 mm
1 Top View
3.3 mm
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration
1
4
3 S
2 S
S
G
Bottom View
30 0.0048 0.0062
14 50 a Single
FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Thin 0.75 mm height • Typical ESD performance 2500 V • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS • DC/DC converter • Battery switch • Power management • For mobile computing
G
D
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
PowerPAK 1212-8S SiS496EDNT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Avalanche current Avalanche energy
L = 0.1 mH
Continuous source-drain diode current
TC = 25 °C TA = 25 °C
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
VDS VGS
ID
IDM IAS EAS IS
PD
TJ, Tstg
LIMIT 30 ± 20 50 a 50 a
20.4 b, c 16.3 b, c
200 25 31 43.3 3.2 b, c 52 33 3.8 b, c 2 b, c -55 to +150 260
UNIT V
A
mJ A W °C
THERMAL RESISTANCE RATINGS
PARAMETER Maximum j.