SIS778DN

SiS778DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. 0.0050 at VGS = 10 V 0.0062 at VGS = 4.5 V ID (A)e 35 35 Qg (Typ.) 13.3 nC PowerPAK 1212-8 3.30 mm D 8D 7 D 6 D 5 S 1S 3.30 mm 2 S 3G 4 FEATURES Halogen-free According to IEC 61249-2-21 Definition SkyFET Monolithic TrenchFET® Power MOSFET and Schottky Diode 100 % Rg and UIS Tested Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook PC - System and Memory - Low Side D Bottom View Ordering Information: SiS778DN-T1-GE3 (Lead (Pb)-free and Halogen-free) G N-Channel MOSFET S Schottky Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 30 ± 20 35e 35e 20.5a, b 16.4a, b 60 35e 5.4a, b 20 20 52 33 3.8a, b 2.4a, b - 50 to 150 260 V A mJ W °C Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See sold...