SIS822DNT

www.vishay.com SiS822DNT Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A) a 12 12 0.8 mm Thin PowerPAK® 1212-8 Single D D D 6 D 7 8 5 Qg (TYP.) 3.8 nC 3.3 mm 1 Top View 3.3 mm 1 3 2 S S 4S G Bottom View Ordering Information: SiS822DNT-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested Thin 0.8 mm profile Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Notebook PC - System power - Load switch Synchronous buck high-side G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t = 100 μs) IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) e, f TJ, Tstg LIMIT 30 ± 20 12 a 12 a 8.7 b, c 7 b, c 30 12 a 2.7 b, c 5 1.25 15.6 10 3.2 b, c 2 b, c -55 to 150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Amb...