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SiSS28DN
Vishay Siliconix
N-Channel 25 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 25
RDS(on) () (MAX.) ...
www.vishay.com
SiSS28DN
Vishay Siliconix
N-Channel 25 V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V) 25
RDS(on) () (MAX.) 0.00152 at VGS = 10 V 0.00224 at VGS = 4.5 V
ID (A) a, g 60 60
Qg (TYP.) 21.8 nC
PowerPAK® 1212-8S
D
D
D 6
7
5
D 8
3.3 mm
1 Top View
3.3 mm
1
4
3 S
2 S
S
G
Bottom View
Ordering Information: SiSS28DN-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES TrenchFET® Gen IV power
MOSFET
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
100 % Rg and UIS tested Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS Synchronous rectification High power density DC/DC VRMs and embedded DC/DC Synchronous buck converter Load switching Battery management
D
G S
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
TC = 25 °C
Continuous Drain C...
