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SiZ342DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
Channel-1 and Channel-2
V...
www.vishay.com
SiZ342DT
Vishay Siliconix
Dual N-Channel 30 V (D-S)
MOSFET
PRODUCT SUMMARY
Channel-1 and Channel-2
VDS (V) 30
RDS(on) (Ω) MAX. 0.0115 at VGS = 10 V
0.0153 at VGS = 4.5 V
ID (A) 30 a
27.5
Qg (Typ.) 4.5 nC
PowerPAIR® 3 x 3 G2 S2 8
S2 7 S2 6
5 S1/D2
(Pin 9)
3 mm 1 3 mm Top View
D1
1
4
3
2 G1 D1
D1
D1
Bottom View
Ordering Information: SiZ342DT-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES PowerPAIR® optimizes high-side and low-side
MOSFETs for synchronous buck converters TrenchFET® Gen IV power
MOSFETs
100 % Rg and UIS tested Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
Synchronous buck - Battery charging - Computer system power - Graphic cards
POL
D1
G1
N-Channel 1
MOSFET
S1/D2
G2
N-Channel 2
MOSFET S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
CHANNEL-1 AND CHANNEL-2
SYMBOL
LIMIT
Drain-Source
Voltage
VDS 30
Gate-Source
Voltage
TC = 25 °C
VGS
+20 / -16 30 a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C TA = 70 °C
ID
26.5 15.6 b, c 12.4 b, c
Pulsed Drain Current (t = 100 μs)
IDM 100
Continuous Source Drain Diode Current
TC = 25 °C TA = 25 °C
IS
13.9 3.1 b, c
Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
10 5
TC = 25 °C
16.7
Maximum Power Dissipation
TC = 70 °C TA = 25 °C TA = 70 °C
PD
10.7 3.7 b, c 2.4 b, c
Operating Junction and Storage Temperature Range Soldering Recomm...