SIZ730DT

New Product N-Channel 30 V (D-S) MOSFETs SiZ730DT Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Channel-1 0.0093 at VGS = 10 V 30 0.0130 at VGS = 4.5 V Channel-2 0.0039 at VGS = 10 V 30 0.0053 at VGS = 4.5 V ID (A) 16a 16a 35a 35a Qg (Typ.) 7.7 nC 21.2 nC PowerPAIR® 6 x 3.7 Pin 1 G1 1 2 D1 3.73 mm D1 D1 3 G2 6 S2 5 S1/D2 Pin 7 S2 4 6 mm Ordering Information: SiZ730DT-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS System Power - Notebook - Server POL Synchronous Buck Converter G1 D1 N-Channel 1 MOSFET G2 N-Channel 2 MOSFET S2 S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 30 16a 16a 12.9b, c 10.3b, c 70 16a 3.2b, c 16 ± 20 35a 35a 26.4b, c 21.1b, c 100 35a 3.8b, c 30 13 45 27 48 17 31 3.9b, c 4.6b, c 2.5b, c 3b, c - ...