New Product
SiZ790DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Channel-1
0.0093 at VGS = 10 V 30
0.0130 at VGS = 4.5 V
Channel-2
0.0047 at VGS = 10 V 30
0.0059 at VGS = 4.5 V
ID (A) 16a 16a 35a 35a
Qg (Typ.) 7.7 nC
17 nC
PowerPAIR® 6 x 3.7
Pin 1
G1 1
2 D1
3.73 mm D1
D1 3
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• SkyFET® Monolithic TrenchFET® Power MOSFETs and Schottky Diode
• 100 % Rg and UIS Te.
Dual N-Channel MOSFET
New Product
SiZ790DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Channel-1
0.0093 at VGS = 10 V 30
0.0130 at VGS = 4.5 V
Channel-2
0.0047 at VGS = 10 V 30
0.0059 at VGS = 4.5 V
ID (A) 16a 16a 35a 35a
Qg (Typ.) 7.7 nC
17 nC
PowerPAIR® 6 x 3.7
Pin 1
G1 1
2 D1
3.73 mm D1
D1 3
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• SkyFET® Monolithic TrenchFET® Power MOSFETs and Schottky Diode
• 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• System Power - Notebook - Server
• POL
• Synchronous Buck Converter
D1
G1 N-Channel 1
MOSFET
S1/D2
G2 6 S2
5
S1/D2 Pin 7
S2
4
6 mm
Ordering Information: SiZ790DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
G2
N-Channel 2 MOSFET
S2
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs) Continuous Source Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
30
16a 16a 12.9b, c 10.3b, c 70 16a 3.2b, c 16
± 20
35a 35a 23.4b, c 18.7b, c 10.