SiZ910DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
VDS (V) RDS(on) () (Max.)
Channel-1
0.0058 at VGS = 10 V 30
0.0075 at VGS = 4.5 V
Channel-2
30
0.0030 at VGS = 10 V
0.0035 at VGS = 4.5 V
ID (A) 40a 40a 40a 40a
Qg (Typ.) 12.5 nC 29 nC
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power • POL • Synchronous Buck Converte.
Dual N-Channel MPSFET
SiZ910DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
VDS (V) RDS(on) () (Max.)
Channel-1
0.0058 at VGS = 10 V 30
0.0075 at VGS = 4.5 V
Channel-2
30
0.0030 at VGS = 10 V
0.0035 at VGS = 4.5 V
ID (A) 40a 40a 40a 40a
Qg (Typ.) 12.5 nC 29 nC
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power • POL • Synchronous Buck Converter
PowerPAIR® 6 x 5
Pin 1 1
G2
8 7
S1/D2 Pin 9
S2
6 5
G1 D1
2
D1 3
5 mm
D1 D1
4
6 mm
Ordering Information: SiZ910DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
G1
N-Channel 1 MOSFET
G2
N-Channel 2
MOSFET
S2
S1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
30
VGS
± 20
V
TC = 25 °C
40a
40a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
40a 22b, c
40a 32b, c
Pulsed Drain Current (t = 300 µs)
TA = 70 °C IDM
17b, c 100
26b, c 120
A
Continuous Source Drain Diode Current
TC = 25 °C TA = 25 °C
IS
24a 3.8b, c
28a 4.3b, c
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS
25
EAS
31
40
80
mJ
TC = 25 °C
48
100
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
31 4.6b, c
64 5.2b, c
W
TA = 70 °C
3b, c
3.3b, c
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak.