SiZ914DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
Channel-1 Channel-2
VDS (V) RDS(on) () (...
SiZ914DT
Vishay Siliconix
Dual N-Channel 30 V (D-S)
MOSFETs
PRODUCT SUMMARY
Channel-1 Channel-2
VDS (V) RDS(on) () (Max.) 0.00640 at VGS = 10 V
30 0.01000 at VGS = 4.5 V
30 0.00137 at VGS = 10 V 0.00194 at VGS = 4.5 V
ID (A)g Qg (Typ.) 16a 7.2 nC 16a 40a 30.1 nC 40a
PowerPAIR® 6 x 5
Pin 1
1
G2
8 7
S1/D2 Pin 9
S2
6 5
G1 D1
2
D1 3
5 mm
D1 D1
4
6 mm
Ordering Information: SiZ914DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES TrenchFET® Gen IV Power
MOSFETs
100 % Rg and UIS Tested Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
D1
CPU Core Power
Computer/Server Peripherals
Synchronous Buck Converter G1 POL
Telecom DC/DC
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 µs) Continuous Source Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
30
+ 20, - 16
16a 40a
16a 40a
16a, b, c
40a, b, c
15.5b, c
38.8b, c
80 100
19 3.25b, c
28 4.3b, c
10 20
5 20
22.7 10...