SIZ918DT

New Product SiZ918DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) Channel-1 0.0120 at VGS = 10 V 30 0.0145 at VGS = 4.5 V Channel-2 0.0037 at VGS = 10 V 30 0.0045 at VGS = 4.5 V ID (A) 16a 16a 28a 28a Qg (Typ.) 6.8 nC 32 nC FEATURES TrenchFET® Power MOSFETs 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Notebook System Power POL Synchronous Buck Converter PowerPAIR® 6 x 5 Pin 1 1 G2 8 7 S1/D2 Pin 9 S2 6 5 G1 D1 5 mm 2 D1 D1 3 D1 4 6 mm Ordering Information: SiZ918DT-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 G1 N-Channel 1 MOSFET G2 N-Channel 2 MOSFET S2 S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 30 16a 16a 14.3b, c 11.4b, c 50 16a 3.4b, c 18 ± 20 28a 28a 26a, b, c 21a, b, c 110 28a 4.3b, c 35 16 61 29 100 18 64 4.2b, c 5.2b, c 2.7b, c 3.3b, c...