CSD18502Q5B
www.ti.com SLPS320 – NOVEMBER 2012
40-V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD18502Q5B
1
...
CSD18502Q5B
www.ti.com SLPS320 – NOVEMBER 2012
40-V, N-Channel NexFET™ Power
MOSFETs
Check for Samples: CSD18502Q5B
1
FEATURES
Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY
TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source
Voltage Gate Charge Total (4.5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold
Voltage TYPICAL VALUE 40 25 8.4 VGS = 4.5V VGS = 10V 1.8 2.5 1.8 UNIT V nC nC mΩ mΩ V
2
ORDERING INFORMATION
Device CSD18502Q5B Package SON 5-mm × 6-mm Plastic Package Media 13-Inch Reel Qty 2500 Ship Tape and Reel
APPLICATIONS
DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control
ABSOLUTE MAXIMUM RATINGS
TA = 25°C VDS VGS Drain to Source
Voltage Gate to Source
Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current, TA = 25°C(1) Pulsed Drain Current, TA = 25°C(2) Power Dissipation(1) Operating Junction and Storage Temperature Range Avalanche Energy, single pulse ID = 88A, L = 0.1mH, RG = 25Ω VALUE 40 ±20 100 204 26 167 3.2 –55 to 150 387 A W °C mJ A UNIT V V
DESCRIPTION
The NexFET™ power
MOSFET has been designed to minimize losses in power conversion applications. Figure 1. Top View
S 1 8 D
IDM PD TJ, TSTG EAS
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P0093-01
(1) Typical RθJA = 40°C/W on a 1-inch2 , 2-oz...