SJMN05A70D
Super Junction MOSFET
N-Channel Super Junction MOSFET
Features
Drain-Source voltage: VDS=750V (@TJ=150C)...
SJMN05A70D
Super Junction
MOSFET
N-Channel Super Junction
MOSFET
Features
Drain-Source
voltage: VDS=750V (@TJ=150C) Low drain-source On resistance: RDS(on)=0.81Ω (Typ.) Ultra low gate charge: Qg=10nC (Typ.)
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
SJMN05A70D
SJMN05A70
TO-252
D
G S
TO-252
Marking Information
SJMN 05A70
YWW
Column 1, 2: Device Code Column 3: Production Information e.g.) YWW
-. Y: Year Code -. WW : Week Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source
voltage Gate-source
voltage
Drain current (DC) (Note 1)
Drain current (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range
VDSS
VGSS
ID
Tc=25C Tc=100C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperatur...