SJMN05S60FD
Super Junction MOSFET
N-Channel Super Junction MOSFET
Features
Drain-Source voltage: VDS=650V (@TJ=150C...
SJMN05S60FD
Super Junction
MOSFET
N-Channel Super Junction
MOSFET
Features
Drain-Source
voltage: VDS=650V (@TJ=150C) Low drain-source On resistance: RDS(on)=0.7Ω (Typ.) Ultra low gate charge: Qg=7nC(Typ.)
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
SJMN05S60FD
SJMN05S60
TO-220F-3L
GDS
TO-220F-3L
Marking Information
AAUUKK SJ◎M△NΔ0YY5MSMD6DD0D
SDB20D45
Column 1: Manufacturer Column 2: Production Information
e.g.) ◎△YMDD
-. ◎△: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) Column 3: Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source
voltage Gate-source
voltage
Drain current (DC) (Note 1)
Drain current (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range
VDSS
VGSS
ID
...