SJMN07A60FD

SJMN07A60FD Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=650V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.51 (Typ.)  Ultra low gate charge: Qg=15nC (Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN07A60FD SJMN07A60 TO-220F-3L GDS TO-220F-3L Marking Information AAUUKK ◎SJ△MYNΔM07YDADM6□D0D SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD□ -. ◎: Option Code (H: Halogen Free) -. △: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) -. □: Package Option Code Column 3: Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) (Note 1) Drain current (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissi...