SJMN07S65FD

SJMN07S65FD Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain- Source voltage: VDS=700V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.6Ω (Typ.)  Ultra low gate charge: Qg=8nC(Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN07S65FD SJMN07S65 TO-220F-3L GDS TO-220F-3L Marking Information AAUUKK SJ◎M△NΔ0YY7MSMD6DD5D SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD -. ◎△: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) Column 3: Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) (Note 1) Drain current (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Avalanche current (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID Tc=25C Tc=100C IDM EAS IAS PD TJ Ts...