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SJMN088R65W

KODENSHI KOREA

N-Channel Super Junction MOSFET

SJMN0 8 8 R6 5 W Super Junction MOSFET N-Channel Super Junction MOSFET Fe at ur e s • Drain-Source volt age: VDS=700V ...


KODENSHI KOREA

SJMN088R65W

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Description
SJMN0 8 8 R6 5 W Super Junction MOSFET N-Channel Super Junction MOSFET Fe at ur e s Drain-Source volt age: VDS=700V (@TJ=150°C) Low drain-source On resist ance: RDS(on)=0. 088Ω (Max. ) Ult ra low gat e charge: Qg=76nC(Typ. ) RoHS compliant device 100%avalanche t est ed Ordering Information Part Number Marking Package SJMN0 8 8 R6 5 W N0 8 8 R6 5 TO- 2 4 7 GDS TO-247 Marking Information AUK △YMDD N088R65 Column 1: Manufacturer Column 2: Production Information e. g. ) △YMDD -. △: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) Column 3: Device Code Absolut e maximum rat ings (TC=25°C unless otherwise noted) Charact e r ist i c Symbol Drain-source volt age Gat e-source volt age Drain curr ent (DC) (Not e 1) Drain curr ent (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Repet it ive avalanche cur rent (Note 1) Repet it ive avalanche energy (Not e 1) Power dissipat ion Diode dv/ dt ruggedness (Not e 3) VDSS VGSS Tc=25...




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