SJMN380R65D

SJMN3 8 0 R6 5 D Super Junction MOSFET N-Channel Super Junction MOSFET Fe at ur e s  Drain-Source voltage: VDS=700V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.38Ω (Max.)  Ultra low gate charge: Qg=20nC(Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN3 8 0 R6 5 D SJMN3 8 0 R6 5 TO- 2 5 2 D G S TO-252 Marking Information SJMN 3 8 0 R6 5 YWWN Column 1, 2: Device Code Column 3: Production Information e. g. ) YWWN -. YWW: Date Code (year, week) -. N: Management Code Absolut e maximum rat ings (TC=25C unless otherwise noted) Charact e r ist ic Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current (DC) (Note 1) Drain current (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Tc=25C ID Tc=100C IDM EAS IAR EAR Power dissipation Diode dv/dt ruggedness (Note 3) PD dv/dt MOSFET ...