SJTA12N60C

SJTA12N60C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 600V Lead Free Package and Finish RDS(ON)(Typ.) 0.28Ω ID 12A Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART NUMBER PACKAGE SJTA12N60C TO-220F BRAND IPS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SJTA12N60C VDSS ID IDM Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current, VGS@10V (NOTE *2) 600 12 36 Power Dissipation PD Derating Factor above 25℃ 31.3 0.25 VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy(L=10mH) ±30 240 EAR Avalanche Energy ,Repetitive (NOTE *2) 0.32 IAR Avalanche Current (NOTE *2) TL Maximum Temperature for Soldering 4 300 Operating Junction and Storage TJ and TSTG Temperature Range (NOTE *1) 150，-55 to150 Units V A A W W/℃ V mJ mJ A ℃ Thermal Resistance Symbol Param...