SJTD04N65C

SJTD04N65C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 0.86Ω ID 4A Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART NUMBER PACKAGE SJTD04N65C TO-252 BRAND IPS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SJTD04N65C VDSS ID IDM Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current, VGS@10V (NOTE *1) 650 4 12 Power Dissipation PD Derating Factor above 25℃ 36.8 0.29 VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy(NOTE *2) ±30 110 EAR Avalanche Energy ,Repetitive (NOTE *1) 0.09 IAR Avalanche Current (NOTE *1) TL Maximum Temperature for Soldering 2 300 Operating Junction and Storage TJ and TSTG Temperature Range (NOTE *1) 150，-55 to150 Units V A A W W/℃ V mJ mJ A ℃ Thermal Resistance Symbol Paramet...