SKCD 08 C 120 I4F
Absolute Maximum Ratings Symbol
VRRM IF(AV) IFSM Tjmax
Conditions
Tj = 25 °C, IR = 0.06 mA Tc = 80 °C...
SKCD 08 C 120 I4F
Absolute Maximum Ratings Symbol
VRRM IF(AV) IFSM Tjmax
Conditions
Tj = 25 °C, IR = 0.06 mA Tc = 80 °C, Tj = 175 °C, Fi=PI/2 10 ms sin 180° Tj = 25 °C Tj = 150 °C
Values
1200 6 36 36 175
Unit
V A A A °C
CAL-DIODE
IF = 8 A VRRM = 1200 V Size: 2,85 mm x 2,85 mm
Electrical Characteristics Symbol
i²t IR VF
Conditions
Tj = 150 °C, sin 180°, 10 ms Tj = 25 °C, VRRM = 1200 V Tj = 150 °C, VRRM = 1200 V Tj = 25 °C, IF = 8 A Tj = 150 °C, IF = 8 A Tj = 175 °C, IF = 8 A
min.
typ.
max.
6 0.06
Unit
A²s mA mA V V V V m V m
0.30 2.33 2.35 2.19 0.90 181.6 0.82 171.25
0.70 2.65 2.68 2.51 1.10 197.58 0.98 191.22
SKCD 08 C 120 I4F Features
max. junction 175 °C very low forward
voltage drop positive temperature coefficient extreme soft recovery
V(TO) rT V(TO) rT
Tj = 150 °C Tj = 150 °C Tj = 175 °C Tj = 175 °C
Dynamic Characteristics Symbol
trr Err Irrm
Conditions
Tj = 150 °C, 8 A, 600 V, 130 A/µs Tj = 150 °C, 8 A, 600 V, 130 A/µs Tj = 150 °C, 8 A, 600 V, 130 A/µs
min.
typ.
0.92 0.4 2.6
max.
Unit
µs mJ A
Typical Applications*
freewheeling diode for IGBT
Thermal Characteristics Symbol
Tj Tstg Tsolder Tsolder Rth(j-c) 10 min. 5 min. Semitrans Assembly 4.33
Conditions
min.
-40 -40
typ.
max.
175 175 250 320
Unit
°C °C °C °C K/W
Mechanical Characteristics Symbol
Raster size Area total Anode Cathode Wire bond Package Chips / Package Metallization Metallization
Conditions
Values
2,85 x 2,85 8 bondable (Al) solderable (Ag/Ni) Al, typ. diameter = 3...