SKCD31C120I3

SKCD 31 C 120 I3 Absolute Maximum Ratings Symbol VRRM IF(AV) IFSM Tjmax Conditions Tj = 25 °C, IR = 0.1 mA Ts = 80 °C, Tj = 150 °C 10 ms sin 180° Tj = 25 °C Tj = 150 °C Values 1200 30 410 350 150 Unit V A A A °C CAL-DIODE IF = 40 A VRRM = 1200 V Size: 5,6 mm x 5,6 mm SKCD 31 C 120 I3 Electrical Characteristics Symbol i2t IR VF V(TO) rT Conditions Tj = 150 °C, 10 ms, sin 180° Tj = 25 °C, VRRM = 1200 V Tj = 125 °C, VRRM = 1200 V Tj = 25 °C, IF = 35 A Tj = 125 °C, IF = 35 A Tj = 125 °C Tj = 125 °C min. typ. max. 613 0.10 4.00 Unit A2s mA mA V V V mΩ 2.00 1.79 1.18 17.8 2.50 2.30 Features low forward voltage drop combined with a low temperature dependence easy paralleling due to a small forward voltage spread very soft recovery behavior small switching losses high ruggedness compatible to thick wire bonding compatible to all standard solder processes Dynamic Characteristics Symbol trr trr Qrr Qrr Irrm Irrm Conditions Tj = 25 °C, 25 A, 600 V, 500 A/µs Tj = 125 °C, 25 A, 600 V, 500 A/µs Tj = 25 °C, 25 A, 600 V, 500 A/µs Tj = 125 °C, 25 A, 600 V, 500 A/µs Tj = 25 °C, 25 A, 600 V, 500 A/µs Tj = 125 °C, 25 A, 600 V, 500 A/µs min. typ. max. Unit µs ns 2 4.5 25 µC µC A A Typical Applications* freewheeling diode for IGBT particularly suitable for frequencies > 8 kHz Thermal Characteristics Symbol Tj Tstg Tsolder Tsolder Rth(j-s) 10 min. 5 min. sold. on 0,38 mm DCB, reference point on copper heatsink close to the chip 1 Conditions min. -40 -40 t...