SKCD 53 C 120 I4F
Absolute Maximum Ratings Symbol
VRRM IF(AV) IFSM Tjmax
Conditions
Tj = 25 °C, IR = 0.12 mA Tc = 80 °C, Tj = 175 °C, Fi=PI/2 10 ms sin 180° Tj = 25 °C Tj = 150 °C
Values
1200 61 550 550 175
Unit
V A A A °C
CAL-DIODE
IF = 100 A VRRM = 1200 V Size: 7,3 mm x 7,3 mm
Electrical Characteristics Symbol
i²t IR VF
Conditions
Tj = 150 °C, sin 180°, 10 ms Tj = 25 °C, VRRM = 1200 V Tj = 150 °C, VRRM = 1200 V Tj = 25 °C, IF = 100 A Tj = 150 °C, IF = 100 A Tj = 175 °C, IF = 100 A
min.
.
CAL-DIODE
SKCD 53 C 120 I4F
Absolute Maximum Ratings Symbol
VRRM IF(AV) IFSM Tjmax
Conditions
Tj = 25 °C, IR = 0.12 mA Tc = 80 °C, Tj = 175 °C, Fi=PI/2 10 ms sin 180° Tj = 25 °C Tj = 150 °C
Values
1200 61 550 550 175
Unit
V A A A °C
CAL-DIODE
IF = 100 A VRRM = 1200 V Size: 7,3 mm x 7,3 mm
Electrical Characteristics Symbol
i²t IR VF
Conditions
Tj = 150 °C, sin 180°, 10 ms Tj = 25 °C, VRRM = 1200 V Tj = 150 °C, VRRM = 1200 V Tj = 25 °C, IF = 100 A Tj = 150 °C, IF = 100 A Tj = 175 °C, IF = 100 A
min.
typ.
max.
1513 0.12
Unit
A²s mA mA V V V V m V m
8.80 2.20 2.15 2.00 0.90 12.5 0.82 11.80
17.70 2.52 2.47 2.31 1.10 13.70 0.98 13.40
SKCD 53 C 120 I4F Features
• • • • max. junction 175 °C very low forward voltage drop positive temperature coefficient extreme soft recovery
V(TO) rT V(TO) rT
Tj = 150 °C Tj = 150 °C Tj = 175 °C Tj = 175 °C
Dynamic Characteristics Symbol
trr Err Irrm
Conditions
Tj = 150 °C, 100 A, 600 V, 2000 A/µs Tj = 150 °C, 100 A, 600 V, 2000 A/µs Tj = 150 °C, 100 A, 600 V, 2000 A/µs
min.
typ.
0.5 5.4 97
max.
Unit
µs mJ A
Typical Applications*
• freewheeling diode for IGBT
Thermal Characteristics Symbol
Tj Tstg Tsolder Tsolder Rth(j-c) 10 min. 5 min. Semitrans Assembly 0.52
Conditions
min.
-40 -40
typ.
max.
175 175 250 320
Unit
°C °C °C °C K/W
Mechanical Characteristics Symbol
Raster size Area total Anode Cathode Wire bond Package Chips / Package Metallization Metallization
Conditions
Values
7,3 x 7,3 53 bondable (Al) solderable (Ag/Ni) Al, ty.