60 V, 78 A, 5.1 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI06073
Features
V(BR)DSS --------------------------------- ...
60 V, 78 A, 5.1 mΩ Low RDS(ON) N ch Trench Power
MOSFET
SKI06073
Features
V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID ---------------------------------------------------------- 78 A RDS(ON) ----------6.6 mΩ max. (VGS = 10 V, ID = 39.0 A) Qg------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A)
Low Total Gate Charge High Speed Switching Low On-Resistance Capable of 4.5 V Gate Drive 100 % UIL Tested RoHS Compliant
Package
TO-263
(4) D
(1) (2) (3) GDS
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(2)(4)
G(1) S(3)
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source
Voltage
VDS
Gate to Source
Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
IDM IS ISM
Single Pulse Avalanche Energy
EAS
Avalanche Current Power Dissipation Operating Junction Temperature Storage Temperature Range
IAS PD TJ TSTG
Test conditions
TC = 25 °C PW ≤ 100µs Duty cycle ≤ 1 %
PW ≤ 100µs Duty cycle ≤ 1 % VDD = 30 V, L = 1 mH, IAS = 11.2 A, unclamped, RG = 4.7 Ω, Refer to Figure 1
TC = 25 °C
Rating 60 ± 20 78 156 78
156
126
23.3 116 150 − 55 to 150
Unit V V A A A A
mJ
A W °C °C
SKI06073-DS Rev.1.3 May. 23, 2014
SANKEN ELECTRIC CO.,LTD. http://www.sanken-ele.co.jp
1
SKI06073
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
S...
