SKM1000GB17R8

SKM1000GB17R8 SEMITRANS® 10 IGBT R8 Modules SKM1000GB17R8 Features* Symmetrical current sharing Low-inductive module design High mechanical robustness UL recognized, file no. E63532 Typical Applications Motor Drives UPS Systems Solar Inverters Remarks Recommended Tjop = -40 ... +150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 100 °C ICnom ICRM VGES tpsc Tj ICRM = 2 x ICnom VCC = 1200 V VGE ≤ 15 V VCES ≤ 1700 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 100 °C IFnom IFRM IFSM Tj IFRM = 2 x IFnom tp = 10 ms, sin 180°, Tj = 25 °C Module Tstg Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(c-s) IC = 1000 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 36 mA VGE = 0 V, VCE = 1700 V, Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = -15V / +15V Tj = 25 °C VCC = 900 V IC = 1000 A VGE = +15/-15 V RG on = 0.7 Ω RG off = 0.7 Ω di/dton = 7.8 kA/µs di/dtoff = 4.8 kA/µs dv/dt = 4600 V/µs Ls = 24 nH per IGBT Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C per IGBT (λgrease=0.81 W/(m*K)) Values 1700 1574 1027 1000 2000 -20 ... 20 10 -40 ... 175 1700 1449 905 1000 2000 6240 -40 ... 175 -40 ... 150 4000 Unit V A A ...