SKM181A3

www.DataSheet4U.com Absolute Maximum Ratings Symbol Conditions 1) VDS VDGR ID IDM VGS PD Tj, (Tstg) Visol humidity climate IF = –ID IFM = –I DM RGE = 20 k Ω Values Units 800 800 36 144 ± 20 700 –40 ... +150 (125) 2 500 Class F 40/125/56 36 144 V V A A V W °C V SEMITRANS® M Power MOSFET Modules SKM 181 A3 3) SKM 181 A3R *) AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode A A Characteristics Symbol Conditions 1) SEMITRANS M1 min. 800 2,1 – – – – 16 – – – – – – – – – – – – – – – – typ. – 3,0 50 300 10 170 33 – 10 1,2 0,6 – 60 30 350 70 0,9 1200 – 42 max. – 4,0 100 1000 100 210 – 160 14 1,7 0,8 20 – – – – 1,2 – – – – 0,18 0,05 Units V V µA µA nA mΩ S pF nF nF nF nH ns ns ns ns V ns ns µC µC °C/W °C/W V(BR)DSS VGS = 0, ID = 0,25 mA VGS = VDS , I D = 1 mA VGS(th) VGS = 0 IDSS Tj = 25 °C Tj = 125 °C VDS = 800 V VGS = 20 V, VDS = 0 IGSS VGS = 10 V, ID = 23 A RDS(on) VDS = 10 V, ID = 23 A gfs CCHC Ciss Coss Crss LDS td(on) tr td(off) tf VSD trr Qrr VGS = 0 VDS = 25 V f = 1 MHz VDD = 400 V ID = 23 A VGS = 10 V RG = 4,7 Ω (SKM 181A3R: 3,3 Ω) IF = 72 A, VGS = 0 V T j = 25 °C 2) T j = 150 °C 2) T j = 25 °C 2) T j = 150 °C 2) SKM 181 A3 SKM 181 A3R *) Inverse Diode 8) Features N Channel, enhancement mode Short internal connections avoid oscillations DCB-ceramic isolated copper baseplate All electrical connections on top for easy busbaring Large clearance (10 mm) and creepage distances (13 mm) UL recognized, file no. E63 532 Typical Applications Switched mode ...