IGBT
Absolute Maximum Ratings
Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions
1)
Values
... 1...
Description
Absolute Maximum Ratings
Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions
1)
Values
... 123 D ... 123 D1 Units V V A A V W °C V 1200 1200 200 / 180 400 / 360 ± 20 1380 – 40 . . .+150 (125) 2 500 7) Class F 40/125/56 200 / 130 400 / 360 1450 10 500 FWD 6) 260 / 180 400 / 360 1800 24 200
SEMITRANS® M IGBT Modules SKM 200 GA 123 D*) SKM 200 GB 123 D SKM 200 GB 123 D1 6) SKM 200 GAL 123 D 6) SKM 200 GAR 123 D 6)
RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1
Inverse Diode IF= – IC Tcase = 25/80 °C IFM= – ICM Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C IFSM tp = 10 ms; Tj = 150 °C I2t
A A A A2s
SEMITRANS 3
Characteristics
Symbol V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres LCE Conditions 1) VGE = 0, IC = 4 mA VGE = VCE, IC = 6 mA Tj = 25 °C VGE = 0 VCE = VCES Tj = 125 °C VGE = 20 V, VCE = 0 IC = 150 A VGE = 15 V; IC = 200 A Tj = 25 (125) °C VCE = 20 V, IC = 150 A per IGBT VGE = 0 VCE = 25 V f = 1 MHz min. typ. max. – 6,5 3 – 1 3(3,7) – – 700 13 2 1,2 20 400 200 800 100 – – 2,5 – 1,2 7 – – 2,2 – 1,2 5,5 – – Units V V mA mA µA V V S pF nF nF nF nH ns ns ns ns mWs mWs V V V mΩ A µC V V V mΩ A µC °C/W °C/W °C/W ≥ VCES – 4,5 5,5 – 0,2 – 12 – – – 2,5(3,1) – 2,8(3,6) 95 – – – – – – – – – – – – – – – – – – – – – – – – – – – – 10 1,5 0,8 – 220 100 600 70 24 17 2,0(1,8) 2,25(2,05) – 5 55(80) 8(20) 1,85(1,6) 2,0(1,8) – 3 60(90) 8(...
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