IGBT
SKM200GB126D
SEMITRANS® 3
Trench IGBT Modules
SKM200GB126D
Features
• Trench = Trenchgate technology • VCE(sat) with po...
Description
SKM200GB126D
SEMITRANS® 3
Trench IGBT Modules
SKM200GB126D
Features
Trench = Trenchgate technology VCE(sat) with positive temperature
coefficient High short circuit capability, self limiting
to 6 x IC UL recognized, file no. E63532
Typical Applications*
AC inverter drives UPS Electronic welders
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 150 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 2xICnom
VGES tpsc Tj
VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS) Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
IC = 150 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 125 °C
chiplevel
Tj = 25 °C Tj = 125 °C
VGE = 15 V chiplevel
Tj = 25 °C Tj = 125 °C
VGE=VCE, IC = 6 mA
VGE = 0 V VCE = 1200 V
Tj = 25 °C Tj = 125 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 20 V
Tj = 25 °C
VCC = 600 V IC = 150 A VGE = +15/-15 V RG on = 1.5 Ω RG off = 1.5 Ω
Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C
Eoff
Tj = 125 °C
Rth(j-c)
per IGBT
Values
1200 260 186 150 300 -20 ... 20
10
-40 ... 150
200 140 150 300 1422 -40 ... 150
500 -40 ... 125
4000
Unit
V A A A A V
µs
°C
A A A A A °C
A °C V
min.
typ.
max. Unit
1.71
2.10
V
2.00
2.45
V
1
1.2
V
0.9...
Similar Datasheet