IGBT
SKM200GB12T4
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V...
Description
SKM200GB12T4
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 313 241 200 600 -20 ... 20 Tj = 150 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 229 172 200 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 990 -40 ... 175 Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 500 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V
Conditions
Values
Unit
SEMITRANS® 3
Fast IGBT4 Modules
SKM200GB12T4 Features
IGBT4 = 4. generation fast trench IGBT (Infineon) CAL4 = Soft switching 4. generation CAL-diode Isolated copper baseplate using DBC technology (Direct Bonded Copper) Increased power cycling capability With integrated gate resistor For higher switching frequenzies up to 20kHz UL recognized, file no. E63532
VGES tpsc Tj IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol
Inverse diode Tj = 175 °C
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c)
Conditions
IC = 200 A VGE = 15 V chiplevel chiplevel VGE = 15 V chiplevel VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 200 A VGE = ±15 V RG on = 1 RG off = 1 di/dton = 5500 A/µs di/dtoff = 2300 A/µs per IGBT Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C
min.
typ.
1.80 2.20 0.8 0.7 5.00 7.50
max.
2.05 2.4...
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