Absolute Maximum Ratings
Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions 1) RGE = 20 kΩ T...
Absolute Maximum Ratings
Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1
Values
Units 1200 1200 300 / 220 600 / 440 ± 20 1660 – 40 . . .+150 (125) 2 500 7) Class F 40/125/56 300 / 200 600 / 440 2200 24200 V V A A V W °C V
SEMITRANS® M IGBT Modules SKM 300 GA 123 D
Inverse Diode Tcase = 25/80 °C IF= – IC IFM= – ICM Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C IFSM tp = 10 ms; Tj = 150 °C I2t
A A A A2s
SEMITRANS 4
Characteristics
Symbol V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres LCE Conditions 1) VGE = 0, IC = 3 mA VGE = VCE, IC = 8 mA Tj = 25 °C VGE = 0 VCE = VCES Tj = 125 °C VGE = 20 V, VCE = 0 IC = 200 A VGE = 15 V; IC = 300 A Tj = 25 (125) °C VCE = 20 V, IC = 200 A min. typ. max. – 6,5 4 – 1 3(3,7) – – 1500 19 2,6 1,3 20 400 160 700 100 – – 2,5 – 1,2 5,5 – – 0,075 0,15 0,038 Units V V mA mA µA V V S pF nF nF nF nH ns ns ns ns mWs mWs V V V mΩ A µC °C/W °C/W °C/W GA Features MOS input (
voltage controlled) N channel, Homogeneous Si Low inductance case Very low tail current with low temperature dependence High short circuit capability, self limiting to 6 * Icnom Latch-up free Fast & soft inverse CAL diodes8) Isolated copper baseplate using DCB Direct Copper Bonding Technology Large clearance (12 mm) and creepage distances (20 mm). Typical Applications: ...
