SKM350MB120SCH17

SKM350MB120SCH17 SEMITRANS® 3 SiC MOSFET Module SKM350MB120SCH17 Features* Full Silicon Carbide (SiC) power module High reliability 2nd Generation SiC MOSFETs Optimized for fast switching and lowest power losses High humidity robustness (HV-H3TRB proof) External SiC Schottky Barrier Diode embedded Insulated copper baseplate using DBC technology (Direct Bonded Copper) Improved thermal performances with Aluminium Nitride (AlN) substrate UL recognized, file no. E63532 Typical Applications High frequency power supplies AC inverters Traction APU EV Chargers Industrial Test Systems Remarks Case temperature limited to TC = 125°C max. Recommended Tjop = -40 ... +150°C Gate-Source SURGE VOLTAGE (tsurge<300ns), VGS_surge = -10V ... +26V Absolute Maximum Ratings Symbol Conditions MOSFET VDSS ID Tj = 175 °C IDM IDRM VGS Tj Integrated body diode IFM IFRM Tc = 25 °C Tc = 80 °C Absolute Maximum Ratings Symbol Conditions Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM tp = 8.3 ms, sin 180°, Tj = 25 °C Tj Absolute Maximum Ratings Symbol Conditions Module It(RMS) Tstg Visol module without TIM AC sinus 50 Hz, t = 1 min Values 1200 478 380 1280 904 -6 ... 22 -40 ... 175 1280 904 Values 1200 187 143 100 300 373 -40 ... 175 Values 500 -40 ... 125 4000 Unit V A A A A V °C A A Unit V A A A A A °C Unit A °C V MB © by SEMIKRON Rev. 1.0 – 14.08.2020 1 SKM350MB120SCH17 SEMITRANS® 3 SiC MOSFET Module SKM350MB12...