SKM350MB120SCH17
SEMITRANS® 3
SiC MOSFET Module
SKM350MB120SCH17
Features*
• Full Silicon Carbide (SiC) power module
• ...
SKM350MB120SCH17
SEMITRANS® 3
SiC
MOSFET Module
SKM350MB120SCH17
Features*
Full Silicon Carbide (SiC) power module
High reliability 2nd Generation SiC
MOSFETs
Optimized for fast switching and lowest power losses
High humidity robustness (HV-H3TRB proof)
External SiC Schottky Barrier Diode embedded
Insulated copper baseplate using DBC technology (Direct Bonded Copper)
Improved thermal performances with Aluminium Nitride (AlN) substrate
UL recognized, file no. E63532
Typical Applications
High frequency power supplies AC inverters Traction APU EV Chargers Industrial Test Systems
Remarks
Case temperature limited to TC = 125°C max.
Recommended Tjop = -40 ... +150°C Gate-Source SURGE
VOLTAGE
(tsurge<300ns), VGS_surge = -10V ... +26V
Absolute Maximum Ratings
Symbol Conditions
MOSFET VDSS ID
Tj = 175 °C
IDM IDRM VGS Tj
Integrated body diode IFM IFRM
Tc = 25 °C Tc = 80 °C
Absolute Maximum Ratings
Symbol Conditions
Inverse diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom IFRM IFSM
tp = 8.3 ms, sin 180°, Tj = 25 °C
Tj
Absolute Maximum Ratings
Symbol Conditions
Module It(RMS) Tstg Visol
module without TIM AC sinus 50 Hz, t = 1 min
Values
1200 478 380 1280 904 -6 ... 22 -40 ... 175
1280 904
Values
1200 187 143 100 300 373 -40 ... 175
Values
500 -40 ... 125
4000
Unit
V A A A A V °C
A A
Unit
V A A A A A °C
Unit
A °C V
MB
© by SEMIKRON
Rev. 1.0 – 14.08.2020
1
SKM350MB120SCH17
SEMITRANS® 3
SiC
MOSFET Module
SKM350MB12...