IGBT. SKiiP23ACC12T4V10 Datasheet

SKiiP23ACC12T4V10 Datasheet PDF


Part Number

SKiiP23ACC12T4V10

Description

IGBT

Manufacture

Semikron International

Total Page 8 Pages
Datasheet
Download SKiiP23ACC12T4V10 Datasheet


SKiiP23ACC12T4V10
SKiiP 23ACC12T4V10
MiniSKiiP® 2
Twin 6-pack
SKiiP 23ACC12T4V10
Target Data
Features
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Typical Applications*
• 4Q inverters
Remarks
• Max. case temperature limited to
TC=125°C
• Short circuit behaviour of one leg must
be verified in the final application
Absolute Maximum Ratings
Symbol Conditions
IGBT 1 - 6
VCES
IC
IC
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3 x ICnom
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 150 °C
IGBT 7 - 12
VCES
IC
IC
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3 x ICnom
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 150 °C
Diode 1 - 6
VRRM
IF
IF
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
IFnom
IFRM
IFSM
Tj
IFRM = 3xIFnom
10 ms, sin 180°, Tj = 150 °C
Diode 7 - 12
VRRM
IF
IF
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
IFnom
IFRM
IFSM
Tj
IFRM = 3 x IFnom
10 ms, sin 180°, Tj = 150 °C
Module
It(RMS)
Tstg
Visol
20 A per spring
AC sinus 50 Hz, 1 min
ACC
© by SEMIKRON
Rev. 3 – 02.04.2015
Values
1200
24
20
24
23
15
45
-20 ... 20
10
-40 ... 175
1200
37
29
41
34
25
75
-20 ... 20
10
-40 ... 175
1200
20
15
23
19
15
45
65
-40 ... 175
1200
29
22
32
26
25
75
100
-40 ... 175
40
-40 ... 125
2500
Unit
V
A
A
A
A
A
A
V
µs
°C
V
A
A
A
A
A
A
V
µs
°C
V
A
A
A
A
A
A
A
°C
V
A
A
A
A
A
A
A
°C
A
°C
V
1

SKiiP23ACC12T4V10
SKiiP 23ACC12T4V10
MiniSKiiP® 2
Twin 6-pack
SKiiP 23ACC12T4V10
Target Data
Features
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Typical Applications*
• 4Q inverters
Remarks
• Max. case temperature limited to
TC=125°C
• Short circuit behaviour of one leg must
be verified in the final application
Characteristics
Symbol Conditions
IGBT 1 - 6
VCE(sat)
IC = 15 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VCE0
chiplevel
Tj = 25 °C
Tj = 150 °C
rCE VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE(th)
ICES
VGE = VCE V, IC = 1 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 15 A
RG on = 39 Ω
RG off = 39 Ω
di/dton = 400 A/µs
di/dtoff = 200 A/µs
VGE = +15/-15 V
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Rth(j-s)
per IGBT, λpaste=0.8 W/K*m
IGBT 7 - 12
VCE(sat)
IC = 25 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VCE0
chiplevel
Tj = 25 °C
Tj = 150 °C
rCE VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE(th)
ICES
VGE = VCE V, IC = 1 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Cies
Coes
Cres
QG
RGint
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-s)
VCC = 600 V
IC = 25 A
RG on = 39 Ω
RG off = 39 Ω
di/dton = 465 A/µs
di/dtoff = 350 A/µs
VGE = +15/-15 V
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
per IGBT, λpaste=0.8 W/K*m
min. typ. max. Unit
1.85 2.10 V
2.25 2.45 V
0.8 0.9 V
0.7 0.8 V
70 80 mΩ
103 110 mΩ
5 5.8 6.5 V
0.1 0.3 mA
mA
0.90 nF
0.08 nF
0.06 nF
85 nC
0Ω
31 ns
30 ns
1.65 mJ
315 ns
66 ns
1.5 mJ
1.3 K/W
1.85 2.10 V
2.25 2.45 V
0.8 0.9 V
0.7 0.8 V
42 48 mΩ
62 66 mΩ
5 5.8 6.5 V
0.1 0.3 mA
mA
1.43 nF
0.12 nF
0.09 nF
142 nC
0Ω
44 ns
46 ns
3.7 mJ
330 ns
62 ns
2.4 mJ
1 K/W
ACC
2
Rev. 3 – 02.04.2015
© by SEMIKRON





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