P-Channel Power MOSFET
General Features
● VDS = -30V,ID = -4.1A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V
● H...
P-Channel Power
MOSFET
General Features
● VDS = -30V,ID = -4.1A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
● PWM applications ● Load switch ● Power management
SL3407A
D G
S Schematic diagram
A79T
Marking and pin assignment
SOT-23 top view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Drain Current-Continuous Drain Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current
BVDSS IDSS
VGS=0V ID=-250μA VDS=-24V,VGS=0V
Limit
-30 ±20 -4.1 -20
3 -55 T...