N-Channel Super Junction Power MOSFET
SL47N65
Features
■ High ruggedness ■ RDS(ON) (Max0.072Ω)@VGS=10V ■ Gate Charge (...
N-Channel Super Junction Power
MOSFET
SL47N65
Features
■ High ruggedness ■ RDS(ON) (Max0.072Ω)@VGS=10V ■ Gate Charge (Typical 152nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-247
12 3
1. Gate 2. Drain 3. Source
BVDSS : 650V ID : 47A RDS(ON) :0.072Ω
2
1
3
Absolute maximum ratings
Symbol VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source
Voltage
Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed
(note 1)
Gate to Source
Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC) Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc Rthcs Rthja
Parameter Thermal resistance, Junction to case Therm...
