SLA2501M

3-circuit High-side Power Switch Array SLA2501M Features q Built-in diagnostic function to detect short and open circuiting of loads and output status signals q Low saturation PNP transistor use (VCE (sat) 0.2V) q Allows direct driving using LS-TTL and C-MOS logic levels q Built-in Zener diode in transistor eliminates the need of (or simplifies) external surge absorption circuit q Built-in independent overcurrent and thermal protection circuit in each circuit q Built-in protection against reverse connection of power supply q Tj = 150ºC guaranteed External Dimensions (unit: mm) 31 ± 0.2 24.4 ± 0.2 3.2 ± 0.15 Ellipse 3.2 ± 0.15 3.8 4.8 ± 0.2 1.7 ± 0.1 12.9 ± 0.2 16 ± 0.2 9.9 ± 0.2 a b 2.45 ± 0.2 6.4 ± 0.5 1.15 –0.1 +0.2 0.65 –0.1 +0.2 0.55 –0.1 +0.2 14 P2.03 ± 0.1= (28.42) Absolute Maximum Ratings Parameter Power supply voltage Drive terminal applied voltage Input terminal voltage DIAG output applied voltage DIAG output source current Voltage across power supply and output terminal Voltage across power supply and drive terminal Output current Output reverse current Electrostatic resistance Power Dissipation Symbol VB VD VIN VDIAG IDIAG VB–O Ratings –13 to +40 –0.3 to VB –0.3 to +7.0 –0.3 to +7.0 –3 VB –34 Unit V V (Ta=25ºC) Conditions 31.3 ± 0.2 a: Type No. b: Lot No. 15 1 23 V V mA V Equivalent Circuit Diagram VB VB–D IO IO ES/A PD Tj TOP Tstg –0.4 1.5 –1.8 ± 250 4.8 –40 to +150 –40 to +115 –50 to +150 V A a b d c f g e A V W ºC ºC ºC MIC C = 200...