SLD740UZ / SLU740UZ
SLD740UZ / SLU740UZ
430V N-Channel MOSFET
General Description
This Power MOSFET is produced using ...
SLD740UZ / SLU740UZ
SLD740UZ / SLU740UZ
430V N-Channel
MOSFET
General Description
This Power
MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
- 11A, 430V, RDS(on)typ. = 0.53Ω@VGS = 10 V - Low gate charge ( typical 15.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
GS
D-PAK
GDS
I-PAK
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted
S
Symbol
Parameter
SLD740UZ / SLU740UZ
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG TL
VESD(G-S)
Drain-Source
Voltage
Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃)
Drain Current - Puls...
