SLD11N40UZ / SLU11N40UZ
SLD11N40UZ / SLU11N40UZ
400V N-Channel MOSFET
General Description
This Power MOSFET is produce...
SLD11N40UZ / SLU11N40UZ
SLD11N40UZ / SLU11N40UZ
400V N-Channel
MOSFET
General Description
This Power
MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
- 8.5A, 400V, RDS(on)typ. = 0.53Ω@VGS = 10 V - Low gate charge ( typical 15.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
GS
D-PAK
GDS
I-PAK
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted
S
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source
Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1)
Gate-Sour...