DatasheetsPDF.com

SLU740UZ Datasheet

Part Number SLU740UZ
Manufacturers Maple Semiconductor
Logo Maple Semiconductor
Description N-Channel MOSFET
Datasheet SLU740UZ DatasheetSLU740UZ Datasheet (PDF)

SLD740UZ / SLU740UZ SLD740UZ / SLU740UZ 430V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half brid.

  SLU740UZ   SLU740UZ






N-Channel MOSFET

SLD740UZ / SLU740UZ SLD740UZ / SLU740UZ 430V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 11A, 430V, RDS(on)typ. = 0.53Ω@VGS = 10 V - Low gate charge ( typical 15.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLD740UZ / SLU740UZ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL VESD(G-S) Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Puls.


2017-04-11 : AGN200S24Z    AGN21024    AGN20006    AGN2601H    AGN26003    AGN2604H    AGN26006    AGN26009    AGN26012    AGN26024   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)