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SLU830C Datasheet

Part Number SLU830C
Manufacturers Maple Semiconductor
Logo Maple Semiconductor
Description N-Channel MOSFET
Datasheet SLU830C DatasheetSLU830C Datasheet (PDF)

SLD830C / SLU830C SLD830C/SLU830C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters and high efficiency switching for power management .

  SLU830C   SLU830C






Part Number SLU830UZ
Manufacturers Maple Semiconductor
Logo Maple Semiconductor
Description N-Channel MOSFET
Datasheet SLU830C DatasheetSLU830UZ Datasheet (PDF)

SLD830UZ / SLU830UZ SLD830UZ / SLU830UZ 550V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridg.

  SLU830C   SLU830C







Part Number SLU830S
Manufacturers Maple Semiconductor
Logo Maple Semiconductor
Description N-Channel MOSFET
Datasheet SLU830C DatasheetSLU830S Datasheet (PDF)

SLD830S / SLU830S SLD830S / SLU830S 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge t.

  SLU830C   SLU830C







N-Channel MOSFET

SLD830C / SLU830C SLD830C/SLU830C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters and high efficiency switching for power management in portable and battery operated products. D Features - 4.0A, 500V, RDS(on) = 1.5Ω@VGS = 10 V - Low gate charge ( typical 20nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note .


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