SLW9N90C

SLW9N90C 6/:1& 9 1&KDQQHO 026)(7 *HQHUDO 'HVFULSWLRQ This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. )HDWXUHV - 9A, 900V, RDS(on) = 1.05ȍ@VGS = 10 V - Low gate charge ( typical 70 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability ' *'6 723 * $EVROXWH 0D[LPXP 5DWLQJV TC = 25ƒC unless otherwise noted 6\PERO 3DUDPHWHU VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25୅) - Continuous (TC = 100୅) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Ava...