Elektronische Bauelemente
SMG2302N
3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET
RoHS Compliant Product...
Elektronische Bauelemente
SMG2302N
3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode
MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount
MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper lead frame SC-59 saves board space.
Fast switching speed. High performance trench technology.
Application
DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize 7’ inch
SC-59
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
REF.
A B C D E F
Millimeter
Min.
2.70 2.25 1.30
Max.
3.10 3.00 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G H J K
L
Millimeter
Min. Max. 0.10 REF. 0.40 REF.
0.10 0.20 0.45 0.55
0.85 1.15
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1
Operating Junction and Storage Temperature Range
ID @ TA=25°C ID @ TA=70°C
PD @ TA=25°C PD @ TA=70°C
VGS ID IDM IS PD Tj, Tstg
Thermal Resistance Ratings
Maximum Junction to Ambient 1
Notes: ...