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SMG2304A

SeCoS

N-Channel MosFET

Elektronische Bauelemente Description The SMG2304A utilized advanced processing techniques to achieve the lowest possibl...


SeCoS

SMG2304A

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Description
Elektronische Bauelemente Description The SMG2304A utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device. The SMG2304A is universally used for all commercial-industrial applications. Features * Small Package Outline * Simple Drive Requirment SMG2304A 2.5A, 30V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A L 3 S Top View 21 B D G C H Drain Gate Source J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Marking : 2304A Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3 VGS@10V Continuous Drain Current,3 VGS@10V Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range G S Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM PD@TA=25 oC Tj, Tstg Ratings 30 ±20 2.5 2.0 10 1.38 0.01 -55~+150 Unit V V A A A W W / oC oC Thermal Data Parameter Thermal Resistance Junction-ambient 3 Max. Symbol Rthj-a Ratings 90 Unit oC /W http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente SMG2304A 2.5A, 30V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25oC Unless otherwise specified) Parameter Symbol Drain-Source Breakdown Vol...




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