Elektronische Bauelemente
SMG2321P
-4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Miniature SC-59 surface mount package saves boa.
P-Channel MosFET
Elektronische Bauelemente
SMG2321P
-4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Miniature SC-59 surface mount package saves board space.
Fast switching speed. High performance trench technology. Low gate charge 7.2Nc.
APPLICATION
DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size 7’ inch
SC-59
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
REF.
A B C D E F
Millimeter
Min. 2.70 2.25 1.30
Max. 3.10 3.00 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G H J K L
Millimeter
Min. Max. 0.10 REF. 0.40 REF.
0.10 0.20 0.45 0.55
0.85 1.15
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
TA=25°C TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
TA=25°C TA=70°C
Operating Junction and Storage Temperature Range
VDS VGS
ID
IDM IS
PD
TJ, TSTG
Thermal Resistance Ratings
Maximum Junction to Ambi.